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Si4908DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
0.25
0.20
I D = 5 A
1
T J = 150 C
0.15
0.1
0.01
T J = 25 C
0.10
0.05
0.00
T A = 25 C
T A = 125 C
0
0.2
0.4
0.6
0. 8
1.0
1.2
2
3
4
5
6
7
8
9
10
0.4
0.2
0.0
V SD – So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
I D = 5 mA
50
40
30
V GS – Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
- 0.2
20
- 0.4
- 0.6
- 0. 8
I D = 250 μ A
10
0
- 50
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
T J – Temperat u re ( C)
Threshold Voltage
100
10
1
Limited b y R DS(on) *
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
0.1
T A = 25 C
Single P u lse
1s
10 s
DC
0.01
0.1
1
10
100
V DS – Drain-to-So u rce V oltage ( V )
* V GS
minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73698
S09-0540-Rev. B, 06-Apr-09
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